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TSL210 640 1 linear sensor array taos039d ? august 2011 1 the lumenology company copyright 2011, taos inc. www.taosinc.com 640 1 sensor-element organization 200 dots-per-inch (dpi) sensor pitch high linearity and uniformity wide dynamic range . . . 2000:1 (66 db) output referenced to ground low image lag . . . 0.5% typ operation to 5 mhz single 5-v supply description the TSL210 linear sensor array consists of five sections of 128 photodiodes, each with associated charge amplifier circuitry, running from a common clock. these sections can be connected to form a contiguous 640 1 pixel array. device pixels measure 120 m (h) by 70 m (w) with 125-m center-to-center pixel spacing. operation is simplified by internal logic that requires only a serial input (si1 through si5) for each section and a common clock for the five sections. the device is intended for use in a wide variety of applications including contact imaging, mark and code reading, bar-code reading, edge detection and positioning, ocr, level detection, and linear and rotational encoding. functional block diagram (each section) si clk 128-bit shift register q128 switch control logic pixel 2 pixel 128 pixel 3 analog bus output amplifier gain trim q3 q2 q1 v dd r l (external 330 load) ao so gnd integrator reset _ + pixel 1 sample/ output s1 s2 2 1 3 1 2 texas advanced optoelectronic solutions inc. 1001 klein road suite 300 plano, tx 75074 (972) 673-0759 package (top view) 1 v dd 2 clk 3 si1 4 ao1 5 so1 6 si2 7 ao2 8 so2 9 gnd 10 si3 11 ao3 12 so3 13 si4 14 ao4 15 so4 16 si5 17 ao5 18 so5 ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 2 copyright 2011, taos inc. the lumenology company www.taosinc.com terminal functions terminal i/o description name no. i/o description ao1 4 o analog output of section 1. ao2 7 o analog output of section 2. ao3 11 o analog output of section 3. ao4 14 o analog output of section 4. ao5 17 o analog output of section 5. clk 2 i clock input for all sections. the clock controls the charge transfer, pixel output, and reset. gnd 9 ground (substrate). all voltages are referenced to the substrate. si1 3 i si1 defines the start of the data out sequence for section 1. si2 6 i si2 defines the start of the data out sequence for section 2. si3 10 i si3 defines the start of the data out sequence for section 3. si4 13 i si4 defines the start of the data out sequence for section 4. si5 16 i si5 defines the start of the data out sequence for section 5. so1 5 o so1 provides the signal to drive the si2 input in serial mode or end of data for section 1 in parallel mode. so2 8 o so2 provides the signal to drive the si3 input in serial mode or end of data for section 2 in parallel mode. so3 12 o so3 provides the signal to drive the si4 input in serial mode or end of data for section 3 in parallel mode. so4 15 o so4 provides the signal to drive the si5 input in serial mode or end of data for section 4 in parallel mode. so5 18 o so5 provides the signal to drive the si input of another device for cascading or as an end of data indication. vdd 1 supply voltage for both analog and digital circuits. detailed description the device consists of five sections of 128 photodiodes (called pixel s ? 640 total in the device) arranged in a linear array. each section has its own signal input and output lines, and all five sections are connected to a common clock line. light energy impinging on a pixel generates photocurrent that is then integrated by the active integration circuitry associated with that pixel. during the integration period, a sampling capacitor connects to the output of the integrator through an analog switch. the amount of charge accumulated at each pixel is directly proportional to the light intensity on that pixel and the integration time. the voltage output developed for each pixel is according to the following relationship: v out = v drk + (r e ) (e e ) (t int ) where: v out is the analog output voltage for white condition v drk is the analog output voltage for dark condition r e is the device responsivity for a given wavelength of light given in v/( j/cm 2 ) e e is the incident irradiance in w/cm 2 t int is integration time in seconds ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 3 the lumenology company copyright 2011, taos inc. www.taosinc.com the output and reset of the integrators in each section are controlled by a 128-bit shift register and reset logic. an output cycle is initiated by clocking in a logic 1 on si. as the si pulse is clocked through the shift register, the charge stored on the sampling capacitors of each pixel is sequentially connected to a charge-coupled output amplifier that generates a voltage on analog output ao (given above). after being read, the pixel integrator is then reset, and the next integration period begins for that pixel. on the 129 th clock rising edge, the so pulse is clocked out on so signifying the end of the read cycle. the section is then ready for another read cycle. the so of each section can be connected to si on the next section in the array (figure 4). so can be used to signify the read is complete. ao is driven by a source follower that requires an external pulldown resistor (330- typical). the output is nominally 0 v for no light input, 2 v for normal white-level, and 3.4 v for saturation light level. when the device is not in the output phase, ao is in a high impedance state. a 0.1 f bypass capacitor should be connected between v dd and ground as close as possible to the device. ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 4 copyright 2011, taos inc. the lumenology company www.taosinc.com absolute maximum ratings ? supply voltage range, v dd ?0.3 v to 6 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input voltage range, v i ?0.3 v to v dd + 0.3v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input clamp current, i ik (v i < 0 or v i > v dd ) ?20 ma to 20 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output clamp current, i ok (v o < 0 or v o > v dd ) ?25 ma to 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . voltage range applied to any output in the high impedance or power-off state, v o ?0.3 v to v dd + 0.3v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous output current, i o (v o = 0 to v dd ) ?25 ma to 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous current through v dd or gnd ?100 ma to 100 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . analog output current range, i o ?25 ma to 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating free-air temperature range, t a ?25 c to 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?25 c to 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature on connection pad for 10 seconds 260 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . esd tolerance, human body model 2000 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ? stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, a nd functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating conditions? is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. recommended operating conditions (see figure 1 and figure 2) min nom max unit supply voltage, v dd 4.5 5 5.5 v input voltage, v i 0 v dd v high-level input voltage, v ih 2 v dd v low-level input voltage, v il 0 0.8 v wavelength of light source, 400 1000 nm clock frequency, f clock 5 5000 khz sensor integration time, serial, t int 0.128 100 ms sensor integration time, parallel, t int 0.026 100 ms load capacitance, c l 330 pf load resistance, r l 300 4700 operating free-air temperature, t a 0 70 c note 1: si must go low before the rising edge of the next clock pulse. ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 5 the lumenology company copyright 2011, taos inc. www.taosinc.com electrical characteristics at f clock = 200 khz, v dd = 5 v, t a = 25 c, p = 640 nm, t int = 5 ms, r l = 330 , e e = 18 w/cm 2 (unless otherwise noted) (see note 3) parameter test conditions min typ max unit v out analog output voltage (white, average over 640 pixels) see note 2 1.6 2 2.4 v v drk analog output voltage (dark, average over 640 pixels) e e = 0 0 0.05 0.15 v prnu pixel response nonuniformity see note 4 20 % nonlinearity of analog output voltage see note 5 0.4% fs output noise voltage see note 6 1 mvrms r e responsivity 16 22 28 v/ ( j/ cm 2 ) se saturation exposure see note 7 155 nj/cm 2 v sat analog output saturation voltage 2.5 3.4 v dsnu dark signal nonuniformity all pixels, e e = 0, see note 8 0.04 0.12 v il image lag see note 9 0.5 % i dd supply current 37 50 ma i ih high-level input current v i = v dd 10 a i il low-level input current v i = 0 10 a v high level output voltage so1 so5 i o = 50 a 4.5 4.95 v v oh high-level output voltage, so1 ? so5 i o = 4 ma 4.6 v v low level output voltage so1 so5 i o = 50 a 0.01 0.1 v v ol low-level output voltage, so1 ? so5 i o = 4 ma 0.4 v c i(si) input capacitance, si 20 pf c i(clk) input capacitance, clk 50 pf notes: 2. the array is uniformly illuminated with a diffused led source having a peak wavelength of 640 nm. 3. clock duty cycle is assumed to be 50%. 4. prnu is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of th e device under test when the array is uniformly illuminated. 5. nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percent of analog output voltage (white). 6. rms noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period. 7. minimum saturation exposure is calculated using the minimum v sat , the maximum v drk , and the maximum r e . 8. dsnu is the difference between the maximum and minimum output voltage in the absence of illumination. 9. image lag is a residual signal left in a pixel from a previous exposure. it is defined as a percent of white-level signal remaining after a pixel is exposed to a white condition followed by a dark condition: il v out (il) v drk v out (white) v drk 100 timing requirements (see figure 1 and figure 2) min nom max unit t su(si) setup time, serial input (see note 10) 20 ns t h(si) hold time, serial input (see note 10 and note 11) 0 ns t w pulse duration, clock high or low 50 ns t r , t f input transition (rise and fall) time 0 500 ns notes: 10. input pulses have the following characteristics: t r = 6 ns, t f = 6 ns. 11. si must go low before the rising edge of the next clock pulse. ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 6 copyright 2011, taos inc. the lumenology company www.taosinc.com dynamic characteristics over recommended ranges of supply voltage and operating free-air temperature (see figure 2) parameter test conditions min typ max unit t s analog output settling time to 1% c l = 10 pf 185 ns typical characteristics ???????????????????? ???????????????????? ??????? ??????? 129 clock cycles clk si1 ao hi-z hi-z figure 1. timing waveforms (each section) 50% ao si clk pixel 128 t s 0 v 0 v 5 v 2.5 v t h(si) 5 v t su(si) t w 1 2 128 129 t s pixel 1 figure 2. operational waveforms (each section) ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 7 the lumenology company copyright 2011, taos inc. www.taosinc.com typical characteristics 0.4 0 300 500 700 900 0.6 0.8 photodiode spectral responsivity 0.2 ? wavelength ? nm normalized responsivity t a = 25 c 1 1100 400 600 800 1000 figure 3 ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 8 copyright 2011, taos inc. the lumenology company www.taosinc.com application information integration time the integration time of the linear array is the period during which light is sampled and charge accumulates on each pixel?s integrating capacitor. the flexibility to adjust the integration period is a powerful and useful feature of the taos tsl2xx linear array family. by changing the integration time, a desired output voltage can be obtained on the output pin while avoiding saturation for a wide range of light levels. each pixel of the linear array consists of a light-sensitive photodiode. the photodiode converts light intensity to a voltage. the voltage is sampled on the sampling capacitor by closing switch s2 (position 1) (see the functional block diagram on page 1). logic controls the resetting of the integrating capacitor to zero by closing switch s1 (position 2). at si input (start integration), pixel 1 is accessed. during this event, s2 moves from position 1 (sampling) to position 3 (holding). this holds the sampled voltage for pixel 1. switch s1 for pixel 1 is then moved to position 2. this resets (clears) the voltage previously integrated for that pixel so that pixel 1 is now ready to start a new integration cycle. when the next clock period starts, the s1 switch is returned to position 1 to be ready to start integrating again. s2 is returned to position 1 to start sampling the next light integration. then the next pixel starts the same procedure. the integration time is the time from a specific pixel read to the next time that pixel is read again. if either the clock speed or the time between successive si pulses is changed, the integration time will vary. after the final (n th ) pixel in the array is read on the output, the output goes into a high-impedance mode. a new si pulse can occur on the ( n +1) clock causing a new cycle of integration/output to begin. note that the time between successive si pulses must not exceed the maximum integration time of 100 msec. the minimum integration time for any given array is determined by time required to clock out all the pixels in the array and the time to discharge the pixels. the time required to discharge the pixels is a constant. therefore, the minimum integration period is simply a function of the clock frequency and the number of pixels in the array. a slower clock speed increases the minimum integration time and reduces the maximum light level for saturation on the output. the minimum integration time shown in this data sheet is based on the maximum clock frequency of 5 mhz. the minimum integration time can be calculated from the equation: t int(min) 1 maximum clock frequency n where: n is the number of pixels in the case of the TSL210, the minimum integration time would be: t int(min) 200 ns 640 128 s it is important to note that not all pixels will have the same integration time if the clock frequency is varied while data is being output. ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 9 the lumenology company copyright 2011, taos inc. www.taosinc.com application information it is good practice on initial power up to run the clock ( n +1) times after the first si pulse to clock out indeterminate data from power up. after that, the si pulse is valid from the time following ( n +1) clocks. the output will go into a high-impedance state after the n +1 high clock edge. it is good practice to leave the clock in a low state when inactive because the si pulse required to start a new cycle is a low-to-high transition. the integration time chosen is valid as long as it falls in the range between the minimum and maximum limits for integration time. if the amount of light incident on the array during a given integration period produces a saturated output (max voltage output), then the data is not accurate. if this occurs, the integration period should be reduced until the analog output voltage for each pixel falls below the saturation level. the goal of reducing the period of time the light sampling window is active is to lower the output voltage level to prevent saturation. however, the integration time must still be greater than or equal to the minimum integration period. if the light intensity produces an output below desired signal levels, the output voltage level can be increased by increasing the integration period provided that the maximum integration time is not exceeded. the maximum integration time is lim ited by the length of time the integrating capacitors on the pixels can hold their accumulated charge. the maximum integration time should not exceed 100 ms for accurate measurements. although the linear array is capable of running over a wide range of operating frequencies up to a maximum of 5 mhz, the speed of the a/d converter used in the application is likely to be the limiter for the maximum clock frequency. the voltage output is available for the whole period of the clock, so the setup and hold times required for the analog-to-digital conversion must be less than the clock period. ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 10 copyright 2011, taos inc. the lumenology company www.taosinc.com application information connection diagrams serial TSL210 1 v dd 2 clk 3 si1 4 ao1 5 so1 6 si2 7 ao2 8 so2 9 gnd 10 si3 11 ao3 12 so3 13 si4 14 ao4 15 so4 16 si5 17 ao5 18 so5 r l 330 parallel TSL210 1 v dd 2 clk 3 si1 4 ao1 5 so1 6 si2 7 ao2 8 so2 9 gnd 10 si3 11 ao3 12 so3 13 si4 14 ao4 15 so4 16 si5 17 ao5 18 so5 r l 330 output 5 output 4 output 3 output 2 output 1 output input input figure 4. connection diagrams ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 11 the lumenology company copyright 2011, taos inc. www.taosinc.com mechanical information 17 0.10 (2,54) pin 1 2 0.090 (2,29 top view bonded die bypass capacitor cover glass 0.0272 (0,69) cross section side view side view 18 0.0272 (0,69) 0.0208 (0,53) 0.510 (12,95) 0.490 (12,45) 1.869 (47,46) 1.858 (47,20) 3.706 (94,125) 3.696 (93,875) 3.54 (89,92) 3.53 (89,66) 0.242 (6,15) 0.222 (5,64) c l 0.158 (4,01) 0.150 (3,81) 0.878 (22,30) 0.858 (21,80) 0.048 (1,22) 0.038 (0,97) 0.130 (3,30) 0.120 (3,05) pixel 640 pixel 1 notes: a. all linear dimensions are in inches (millimeters). b. pixel centers are located along the center line of the mounting holes. c. cover glass index of refraction is 1.52. d. this drawing is subject to change without notice. figure 5. TSL210 mechanical specifications ams ag technical content still valid
TSL210 640 1 linear sensor array taos039d ? august 2011 12 copyright 2011, taos inc. the lumenology company www.taosinc.com production data ? information in this document is current at publication date. products conform to specifications in accordance with the terms of texas advanced optoelectronic solutions, inc. standard warranty. production processing does not necessarily include testing of all parameters. notice texas advanced optoelectronic solutions, inc. (t aos) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. customers are advised to contact taos to obtain the latest product information before placing orders or designing taos products into systems. taos assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. taos further makes no claim as to the suitability of its products for any particu lar purpose, nor does taos assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. texas advanced optoelectronic solutions, inc. products are not designed or intended for use in critical applications in which the failure or malfunction of the taos product may result in personal injury or death. use of t aos products in life support systems is expressly unauthorized and any such use by a customer is completely at the customer?s risk. lumenology, taos, the taos logo, and texas advanced optoelectronic solutions are registered trademarks of texas advanced optoelectronic solutions incorporated. ams ag technical content still valid

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